Paper
16 December 2013 Control method for transition metal oxides as a hole-injection layer for organic light-emitting devices
Wejiang Zhang, Jie Zhang
Author Affiliations +
Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 906818 (2013) https://doi.org/10.1117/12.2052158
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
The mechanism of transition metal oxide, molybdenum oxide (MoOx), used as interlayers in organic light-emitting devices (OLEDs) are investigated. The electronic structures and interfacial chemical reactions are investigated with ultraviolet and x-ray photoelectron spectroscopy. The influence of evaporation temperatures on the electronic structures of MoOx films and the electrical properties of organic light emitting diodes are investigated.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wejiang Zhang and Jie Zhang "Control method for transition metal oxides as a hole-injection layer for organic light-emitting devices", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 906818 (16 December 2013); https://doi.org/10.1117/12.2052158
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KEYWORDS
Organic light emitting diodes

Oxides

Aluminum

Oxygen

Transition metals

Argon

Electrodes

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