Paper
24 June 2014 Development of bi-spectral InAs/GaSb type II superlattice image detectors
T. Stadelmann, A. Wörl, M. Wauro, V. Daumer, J. Niemasz, W. Luppold, T. Simon, M. Riedel, R. Rehm, M. Walther
Author Affiliations +
Abstract
InAs/GaSb superlattices are characterized by a broken-gap type II band alignment. Their effective band gap can be engineered to match mid to long wavelength infrared (IR) photon energies. Fraunhofer IAF has developed image detectors for threat warning systems based on this material system that are capable of spatially and temporally coincident detection in two mid-IR wavelength ranges. We review the present status of the processing technology, report continuous improvements achieved in key areas of detector performance, including defect density and noise behavior, and present initial results for statistical characterization of ensembles of detector elements with respect to diode characteristics and noise.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Stadelmann, A. Wörl, M. Wauro, V. Daumer, J. Niemasz, W. Luppold, T. Simon, M. Riedel, R. Rehm, and M. Walther "Development of bi-spectral InAs/GaSb type II superlattice image detectors", Proc. SPIE 9070, Infrared Technology and Applications XL, 90700V (24 June 2014); https://doi.org/10.1117/12.2049951
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Cited by 5 scholarly publications.
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KEYWORDS
Sensors

Image sensors

Superlattices

Mid-IR

Manufacturing

Diodes

Dielectrics

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