Experimental measurements of optically-pumped NMR (OPNMR) and spin polarization in bulk GaAs and GaAs/AlGaAs quantum wells

Dustin D. Wheeler; Erika L. Sesti; Dipta Saha; Gary D. Sanders; Christopher J. Stanton; Sophia E. Hayes

doi:10.1117/12.2062133

28 August 2014 Experimental measurements of optically-pumped NMR (OPNMR) and spin polarization in bulk GaAs and GaAs/AlGaAs quantum wells

Dustin D. Wheeler, Erika L. Sesti, Dipta Saha, Gary D. Sanders, Christopher J. Stanton, Sophia E. Hayes

Author Affiliations +

Proceedings Volume 9167, Spintronics VII; 91670O (2014) https://doi.org/10.1117/12.2062133
Event: SPIE NanoScience + Engineering, 2014, San Diego, California, United States

Abstract

Optically-pumped nuclear magnetic resonance (OPNMR) is a measurement scheme that utilizes optical pumping of conduction electrons within a semiconductor to polarize systems of nuclear spins to which they are coupled. The spectroscopic power of NMR techniques is brought to bear on these rare spin systems through enhancement of the nuclear spin polarization, here in direct-gap semiconductors such as bulk semi-insulating GaAs and GaAs/AlGaAs quantum wells. The nuclear spins act as reporters of the electron spins that are oriented during optical pumping with circularly polarized laser light, at specific photon energies. The effects of penetration depth of the laser in the sample can be understood when irradiating at energies less than the bandgap energy, as well as details of coupling to interband transitions originating from Landau levels at photon energies greater than the bandgap energy. We show that OPNMR is particularly sensitive to the sign of magnetization that results from light hole-to-conduction band transitions because the sign of magnetization is reversed when the light hole states in the valence band are accessed.

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Dustin D. Wheeler, Erika L. Sesti, Dipta Saha, Gary D. Sanders, Christopher J. Stanton, and Sophia E. Hayes "Experimental measurements of optically-pumped NMR (OPNMR) and spin polarization in bulk GaAs and GaAs/AlGaAs quantum wells", Proc. SPIE 9167, Spintronics VII, 91670O (28 August 2014); https://doi.org/10.1117/12.2062133

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KEYWORDS

Electrons

Gallium arsenide

Spin polarization

Quantum wells

Optical pumping

Semiconductors

Magnetism

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