Bulk GaN and its application as substrates in building quantum nanostructures for some electronic and optoelectronic devices

M. Bockowski

doi:10.1117/12.2059749

16 September 2014 Bulk GaN and its application as substrates in building quantum nanostructures for some electronic and optoelectronic devices

M. Bockowski

Author Affiliations +

Proceedings Volume 9174, Nanoepitaxy: Materials and Devices VI; 91740G (2014) https://doi.org/10.1117/12.2059749
Event: SPIE NanoScience + Engineering, 2014, San Diego, California, United States

Abstract

The use of GaN crystals grown by three methods (and their combinations): Hydride Vapor Phase Epitaxy (HVPE), high nitrogen pressure solution (HNPS) and ammonothermal method for optoelectronic (laser diodes) and electronic (transistors) devices is presented. After a brief review on the development of the three crystallization methods, the GaN crystals’ uniform and unique properties, which allow to use them as substrates for building devices, are shown. The Metal Organic Vapor Phase Epitaxy (MOCVD) and Molecular Beam Epitaxy (MBE) technologies for growing the nitride quantum nanostructures as well as the structures’ properties and processing of devices are demonstrated. Future challenges and perspectives for application of bulk GaN as substrates in building quantum nanostructures for some electronic and optoelectronic devices are discussed.

Citation Download Citation

M. Bockowski "Bulk GaN and its application as substrates in building quantum nanostructures for some electronic and optoelectronic devices", Proc. SPIE 9174, Nanoepitaxy: Materials and Devices VI, 91740G (16 September 2014); https://doi.org/10.1117/12.2059749

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