Paper
29 September 2014 Advancements in large-format SiPIN hybrid focal plane technology
S. Kilcoyne, N. Malone, B. Kean, J. Cantrell, J. Fierro, L. Meier, S. DeWalt, C. Hewitt, J. Wyles, J. Drab, G. Grama, G. Paloczi, J. Vampola, K. Brown
Author Affiliations +
Abstract
Raytheon has built hybrid focal planes based on Silicon P-I-N photo-sensors for the past three decades. The device has undergone a continuous improvement process during this period. The detector material has been improved and the thickness has been greatly reduced. Most recently, the readout integrated circuit (ROIC) and the hybridization process, have undergone significant advancements1,2,3. This paper presents recent advancements in the latest generation 8μm pixelpitch 1k2 format and 5k2 format visible Si PIN focal-planes. The current family of devices has very low read-noise ROICs, low detector dark current, operate with a 25 volt bias and deliver 50% mean response operability greater than 99.995%.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Kilcoyne, N. Malone, B. Kean, J. Cantrell, J. Fierro, L. Meier, S. DeWalt, C. Hewitt, J. Wyles, J. Drab, G. Grama, G. Paloczi, J. Vampola, and K. Brown "Advancements in large-format SiPIN hybrid focal plane technology", Proc. SPIE 9219, Infrared Remote Sensing and Instrumentation XXII, 921906 (29 September 2014); https://doi.org/10.1117/12.2072720
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Cited by 4 scholarly publications.
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KEYWORDS
Sensors

Semiconducting wafers

Readout integrated circuits

Modulation transfer functions

Wafer bonding

Quantum efficiency

Silicon

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