Paper
20 November 2014 Persistent photoconductivity study in AlGaN superlattice
Li-wei Wang, Jin-tong Xu, Nili Wang, Peng-xiao Xu, Xiangyang Li
Author Affiliations +
Proceedings Volume 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications; 93000S (2014) https://doi.org/10.1117/12.2071042
Event: International Symposium on Optoelectronic Technology and Application 2014, 2014, Beijing, China
Abstract
The transport properties of GaN and its alloys are attracting increasing interest due to the potential application of these materials for solar blind photodetectors and high mobility transistors. Because of the large band gap, the applications of AlxGa1−xN are extensive, such as for visible-blind ultraviolet detectors, laser diodes, and short-wave light emitting diodes (LEDs). However, the persistent photoconductivity (PPC) of GaN based photoconductive devices affects its applications. In order to study the origin of PPC, we designed solar blind ultraviolet photoconductive detector, which consists of n - Al0.65Ga0.35N top contact layer (100nm), n-Al0.42Ga0.58N/i-Al0.65Ga0.35N superlattice layers (200nm), i- Al0.65Ga0.35N layer (600nm), AlN buffer layer and double polished sapphire substrate. Moreover, there are photoconductive devices with different photosensitive areas. Investigations of electric-field effects and thermal effects on PPC in n-Al0.42Ga0.58N/i-Al0.65Ga0.35N superlattice are presented. We have observed that, by applying a high-voltage pulse, the course of PPC was effectively accelerated: With the same pulse width and different voltage, in the appropriate range, the higher of the voltage, the course of PPC was more effectively accelerated; with the same voltage and different pulse width, in the appropriate range, the wider of the pulse width, the course of PPC was more effectively accelerated. And PPC effect strongly depends on the temperature. The decay time of the PPC depend on the temperature and become longer with a decreasing temperature.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Li-wei Wang, Jin-tong Xu, Nili Wang, Peng-xiao Xu, and Xiangyang Li "Persistent photoconductivity study in AlGaN superlattice", Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 93000S (20 November 2014); https://doi.org/10.1117/12.2071042
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KEYWORDS
Superlattices

Sensors

Thermal effects

Ultraviolet radiation

Gallium nitride

Absorption

Photodetectors

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