White-light interferometric microscopy for wafer defect inspection

Renjie Zhou; Christopher Edwards; Casey Bryniarski; Marjorie F. Dallmann; Gabriel Popescu; Lynford L. Goddard

doi:10.1117/12.2079660

11 March 2015 White-light interferometric microscopy for wafer defect inspection

Renjie Zhou, Christopher Edwards, Casey Bryniarski, Marjorie F. Dallmann, Gabriel Popescu, Lynford L. Goddard

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Proceedings Volume 9336, Quantitative Phase Imaging; 93362P (2015) https://doi.org/10.1117/12.2079660
Event: SPIE BiOS, 2015, San Francisco, California, United States

Abstract

White-light imaging systems are free of laser-speckle. Thus, they offer high sensitivity for optical defect metrology, especially when used with interferometry based quantitative phase imaging. This can be a potential solution for wafer inspection beyond the 9 nm node. Recently, we built a white-light epi-illumination diffraction phase microscopy (epi-wDPM) for wafer defect inspection. The system is also equipped with an XYZ scanning stage and real-time processing. Preliminary results have demonstrated detection of 15 nm by 90 nm in a 9 nm node densely patterned wafer with bright-field imaging. Currently, we are implementing phase imaging with epi-wDPM for additional sensitivity.

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Renjie Zhou, Christopher Edwards, Casey Bryniarski, Marjorie F. Dallmann, Gabriel Popescu, and Lynford L. Goddard "White-light interferometric microscopy for wafer defect inspection", Proc. SPIE 9336, Quantitative Phase Imaging, 93362P (11 March 2015); https://doi.org/10.1117/12.2079660

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KEYWORDS

Semiconducting wafers

Defect inspection

Inspection

Phase imaging

Interferometry

Spatial coherence

Diffraction

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