Towards high power flip-chip long-wavelength semiconductor disk lasers

A. Rantamaki; E. Saarinen; J. Lyytikäinen; J. Kontio; J. Heikkinen; Kimmo Lahtonen; M. Valden; O. Okhotnikov

doi:10.1117/12.2076795

4 March 2015 Towards high power flip-chip long-wavelength semiconductor disk lasers

A. Rantamaki, E. Saarinen, J. Lyytikäinen, J. Kontio, J. Heikkinen, Kimmo Lahtonen, M. Valden, O. Okhotnikov

Proceedings Volume 9349, Vertical External Cavity Surface Emitting Lasers (VECSELs) V; 934908 (2015) https://doi.org/10.1117/12.2076795
Event: SPIE LASE, 2015, San Francisco, California, United States

Abstract

Optically pumped semiconductor disk lasers (SDLs) are presented with emphasis on wafer bonding InP-based active regions with GaAs-based distributed Bragg reflectors (DBRs) and reducing the number of required layer pairs in the DBR. The wafer bonding is performed at a relatively low temperature of 200 °C utilizing transparent intermediate bonding layers. The reflectivity of the semiconductor DBR section is enhanced by finishing the DBR with a thin low refractive index layer and a highly reflecting metal layer. Such a design enables considerably thinner mirror structures than the conventional design, where the semiconductor DBR is finished with mere metal layers. In addition, a 90 nm thick Al₂O₃layer is shown to produce negligible increase in the thermal resistance of the SDL. Furthermore, a flip-chip SDL with a GaAs/AlAs-Al₂O₃-Al mirror is demonstrated with watt-level output power at the wavelength of 1.32 μm. The properties and future improvement issues for flip-chip SDLs emitting at 1.3–1.6 μm are also discussed.

Citation Download Citation

A. Rantamaki, E. Saarinen, J. Lyytikäinen, J. Kontio, J. Heikkinen, Kimmo Lahtonen, M. Valden, and O. Okhotnikov "Towards high power flip-chip long-wavelength semiconductor disk lasers", Proc. SPIE 9349, Vertical External Cavity Surface Emitting Lasers (VECSELs) V, 934908 (4 March 2015); https://doi.org/10.1117/12.2076795

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