Raman gain of SiC as a potential medium for Raman lasers

Larry D. Merkle; Jun Zhang; Graham Allen; Jay W. Dawson; Mark Dubinskii

doi:10.1117/12.2077299

16 March 2015 Raman gain of SiC as a potential medium for Raman lasers

Larry D. Merkle, Jun Zhang, Graham Allen, Jay W. Dawson, Mark Dubinskii

Proceedings Volume 9359, Optical Components and Materials XII; 935904 (2015) https://doi.org/10.1117/12.2077299
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

We have investigated stimulated Raman scattering in the 4H polytype of SiC, due to its excellent thermal conductivity which is of great importance for power scaling of Raman lasers. Spectroscopy verifies the sample’s polytype and precludes any significant admixture of other polytypes. Tests indicate the moderate optical quality of this commercially available sample. Using pump-probe measurements around 1030 nm, we find the Raman gain coefficient of the major peak at 777 cm^-1 to be 0.46 cm/GW. Although this value is only modest, calculations and experience with other Raman materials indicate that Raman lasing of 4H SiC should be possible with reasonable intensities of 1064-nm pulsed pumping.

Citation Download Citation

Larry D. Merkle, Jun Zhang, Graham Allen, Jay W. Dawson, and Mark Dubinskii "Raman gain of SiC as a potential medium for Raman lasers", Proc. SPIE 9359, Optical Components and Materials XII, 935904 (16 March 2015); https://doi.org/10.1117/12.2077299

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