Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates

Julien Sellés; Daniel Rosales; Bernard Gil; Guillaume Cassabois; Thierry Guillet; Julien Brault; Benjamin Damilano; Philippe Vennéguès; Philippe de Mierry; Jean Massies

doi:10.1117/12.2076284

13 March 2015 Optical properties of small GaN-Al_0.5Ga_0.5N quantum dots grown on (11-22) GaN templates

Julien Sellés, Daniel Rosales, Bernard Gil, Guillaume Cassabois, Thierry Guillet, Julien Brault, Benjamin Damilano, Philippe Vennéguès, Philippe de Mierry, Jean Massies

Author Affiliations +

Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93630Z (2015) https://doi.org/10.1117/12.2076284
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

GaN/Al_0.5Ga_0.5N quantum dots deposited on the (11-22) plane have been grown by combining Molecular Beam Epitaxy (MBE) and Metal Organic Vapor Phase Epitaxy (MOVPE). The (11-22) GaN oriented template was realized by MOVPE starting from a M-plane oriented sapphire substrate. The average dot sizes are the following: between 15 and 20 nm in the <-1-123> and <1-100> directions and a height ranging between 0.8 and 1.4 nm. Their density is ranging between 2 and 8x10¹⁰cm^-2. The crystal field splitting is measured in Al_0.5Ga_0.5N via polarized microphotoluminescence. We study the photoluminescence properties of small quantum dots which present innovative optical properties among which are the evolution of the polarization of the emitted photons at different temperatures. We also analyze the distortion of the photoluminescence at different time delays after the excitation pulse. A redshift is found that is attributed to the complex thermally-induced delocalization of the carriers through the assembly of dots from the smaller ones to the bigger ones.

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Julien Sellés, Daniel Rosales, Bernard Gil, Guillaume Cassabois, Thierry Guillet, Julien Brault, Benjamin Damilano, Philippe Vennéguès, Philippe de Mierry, and Jean Massies "Optical properties of small GaN-Al_0.5Ga_0.5N quantum dots grown on (11-22) GaN templates", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630Z (13 March 2015); https://doi.org/10.1117/12.2076284

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