Scale-up of the chemical lift-off of (In)GaN-based p-i-n junctions from sapphire substrates using sacrificial ZnO template layers

D. J. Rogers; S. Sundaram; Y. El Gmili; F. Hosseini Teherani; P. Bove; V. Sandana; P. L. Voss; A. Ougazzaden; A. Rajan; K. A. Prior; R. McClintock; M. Razeghi

doi:10.1117/12.2175897

24 March 2015 Scale-up of the chemical lift-off of (In)GaN-based p-i-n junctions from sapphire substrates using sacrificial ZnO template layers

D. J. Rogers, S. Sundaram, Y. El Gmili, F. Hosseini Teherani, P. Bove, V. Sandana, P. L. Voss, A. Ougazzaden, A. Rajan, K. A. Prior, R. McClintock, M. Razeghi

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Proceedings Volume 9364, Oxide-based Materials and Devices VI; 936424 (2015) https://doi.org/10.1117/12.2175897
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

(In)GaN p-i-n structures were grown by MOVPE on both GaN- and ZnO-coated c-sapphire substrates. XRD studies of the as-grown layers revealed that a strongly c-axis oriented wurtzite crystal structure was obtained on both templates and that there was a slight compressive strain in the ZnO underlayer which increased after GaN overgrowth. The InGaN peak position gave an estimate of 13.6at% for the indium content in the active layer. SEM and AFM revealed that the top surface morphologies were similar for both substrates, with an RMS roughness (5 μm x 5 μm) of about 10 nm. Granularity appeared slightly coarser (40nm for the device grown on ZnO vs 30nm for the device grown on the GaN template) however. CL revealed a weaker GaN near band edge UV emission peak and a stronger broad defect-related visible emission band for the structure grown on the GaN template. Only a strong ZnO NBE UV emission was observed for the sample grown on the ZnO template. Quarter-wafer chemical lift-off (CLO) of the InGaN-based p-i-n structures from the sapphire substrate was achieved by temporary-bonding the GaN surface to rigid glass support with wax and then selectively dissolving the ZnO in 0.1M HCl. XRD studies revealed that the epitaxial nature and strong preferential c-axis orientation of the layers had been maintained after lift-off. This demonstration of CLO scale-up, without compromising the crystallographic integrity of the (In)GaN p-i-n structure opens up the perspective of transferring GaN based devices off of sapphire substrates industrially.

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D. J. Rogers, S. Sundaram, Y. El Gmili, F. Hosseini Teherani, P. Bove, V. Sandana, P. L. Voss, A. Ougazzaden, A. Rajan, K. A. Prior, R. McClintock, and M. Razeghi "Scale-up of the chemical lift-off of (In)GaN-based p-i-n junctions from sapphire substrates using sacrificial ZnO template layers", Proc. SPIE 9364, Oxide-based Materials and Devices VI, 936424 (24 March 2015); https://doi.org/10.1117/12.2175897

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