Paper
10 March 2015 InP-based type-II heterostructure lasers for wavelengths up to 2.7 μm
Stephan Sprengel, Ganpath Kumar Veerabathran, Alexander Andrejew, Anna Köninger, Gerhard Boehm, Christian Grasse, Markus-Christian Amann
Author Affiliations +
Proceedings Volume 9382, Novel In-Plane Semiconductor Lasers XIV; 93820U (2015) https://doi.org/10.1117/12.2078779
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
Type-II light sources on InP substrate are an innovative concept for wavelengths ranging from 2 μm to the mid-IR. The concept is using the type-II band alignment between GaInAs and GaAsSb to exceed the limitation of type-I devices. Since the first demonstration of InP type-II heterostructure lasers above 2.3 μm in 2012, we have extended the emission wavelength to 2.7 μm. Furthermore, a drastic reduction in threshold current density down to 104 A/cm2 per QW at infinite length was achieved (at 2.5 μm), which represents an improvement by more than a factor of two. Additionally CW operation up to 30°C and up to 80°C pulsed is presented. Furthermore, LEDs for 3.5μm peak emission wavelength and up to 86 μW output power are shown.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephan Sprengel, Ganpath Kumar Veerabathran, Alexander Andrejew, Anna Köninger, Gerhard Boehm, Christian Grasse, and Markus-Christian Amann "InP-based type-II heterostructure lasers for wavelengths up to 2.7 μm", Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93820U (10 March 2015); https://doi.org/10.1117/12.2078779
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Cited by 5 scholarly publications.
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KEYWORDS
Quantum wells

Light emitting diodes

Electrons

Heterojunctions

Semiconductor lasers

Continuous wave operation

Gallium antimonide

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