Application of the transport of intensity equation to EUV multilayer defect analysis

Dongbo Xu; Peter Evanschitzky; Andreas Erdmann

doi:10.1117/12.2085468

16 March 2015 Application of the transport of intensity equation to EUV multilayer defect analysis

Dongbo Xu, Peter Evanschitzky, Andreas Erdmann

Author Affiliations +

Proceedings Volume 9422, Extreme Ultraviolet (EUV) Lithography VI; 942218 (2015) https://doi.org/10.1117/12.2085468
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

This paper proposes a new method for the characterization of multilayer defects of EUV masks. The method uses measured or simulated EUV projection images at different focus positions. The Transport of Intensity Equation (TIE) is applied to retrieve the phase distribution of the reflected light in the vicinity of the defect. An Artificial Neural Network (ANN) is applied to correlate the optical properties of the intensity and recovered phase of the defect with the defect geometry parameters and to reconstruct the defect geometry parameters from though-focus-images of unknown defects.

Citation Download Citation

Dongbo Xu, Peter Evanschitzky, and Andreas Erdmann "Application of the transport of intensity equation to EUV multilayer defect analysis", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942218 (16 March 2015); https://doi.org/10.1117/12.2085468

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE