Paper
18 March 2015 Standard cell design in N7: EUV vs. immersion
Bharani Chava, David Rio, Yasser Sherazi, Darko Trivkovic, Werner Gillijns, Peter Debacker, Praveen Raghavan, Ahmad Elsaid, Mircea Dusa, Abdelkarim Mercha, Julien Ryckaert, Diederik Verkest
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Abstract
While waiting for EUV lithography to become ready for adoption, we need to create designs compatible with both EUV single exposures as well as with 193i multiple splits strategy for technology nodes 7nm and below needed to keep the scaling trend intact. However, the standard approach of designing standard cells in two-dimensional directions is no more valid owing to insufficient resolution of 193-i scanner. Therefore, we propose a standard cell design methodology, which exploits purely one-dimensional interconnect.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bharani Chava, David Rio, Yasser Sherazi, Darko Trivkovic, Werner Gillijns, Peter Debacker, Praveen Raghavan, Ahmad Elsaid, Mircea Dusa, Abdelkarim Mercha, Julien Ryckaert, and Diederik Verkest "Standard cell design in N7: EUV vs. immersion", Proc. SPIE 9427, Design-Process-Technology Co-optimization for Manufacturability IX, 94270E (18 March 2015); https://doi.org/10.1117/12.2085739
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Cited by 24 scholarly publications.
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KEYWORDS
Extreme ultraviolet

Photovoltaics

Deep ultraviolet

Standards development

Extreme ultraviolet lithography

Lithography

Photomasks

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