RIE challenges for sub-15 nm line-and-space patterning using directed self-assembly lithography with coordinated line epitaxy (COOL) process

Y. Kasahara; Y. Seino; K. Kobayashi; H. Kanai; H. Sato; H. Kubota; T. Tobana; S. Minegishi; K. Miyagi; N. Kihara; K. Kodera; M. Shiraishi; Y. Kawamonzen; S. Nomura; T. Azuma

doi:10.1117/12.2085704

17 March 2015 RIE challenges for sub-15 nm line-and-space patterning using directed self-assembly lithography with coordinated line epitaxy (COOL) process

Y. Kasahara, Y. Seino, K. Kobayashi, H. Kanai, H. Sato, H. Kubota, T. Tobana, S. Minegishi, K. Miyagi, N. Kihara, K. Kodera, M. Shiraishi, Y. Kawamonzen, S. Nomura, T. Azuma

Author Affiliations +

Proceedings Volume 9428, Advanced Etch Technology for Nanopatterning IV; 94280S (2015) https://doi.org/10.1117/12.2085704
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

Directed self-assembly (DSA) is one of the promising candidates for next-generation lithography. We developed a novel simple sub-15 nm line-and-space (L/S) patterning process, the “coordinated line epitaxy (COOL) process,” using grapho- and chemo-hybrid epitaxy. In this study we evaluate the DSA L/S pattern transfer margin. Since defect reduction is difficult in the case of the DSA pattern transfer process, there is a need to increase the pattern transfer margin. We also describe process integration for electrical yield verification.

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Y. Kasahara, Y. Seino, K. Kobayashi, H. Kanai, H. Sato, H. Kubota, T. Tobana, S. Minegishi, K. Miyagi, N. Kihara, K. Kodera, M. Shiraishi, Y. Kawamonzen, S. Nomura, and T. Azuma "RIE challenges for sub-15 nm line-and-space patterning using directed self-assembly lithography with coordinated line epitaxy (COOL) process", Proc. SPIE 9428, Advanced Etch Technology for Nanopatterning IV, 94280S (17 March 2015); https://doi.org/10.1117/12.2085704

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