The study of optical properties of InGaN-based solar cell with blue emission wavelength

Jiangteng Wang; Wen Ding; Feng Yun; Qiang Li; Shuai Wang; Deyang Xia; Ye Zhang; Maofeng Guo; Shuo Liu; Xun Hou

doi:10.1117/12.2083303

19 February 2015 The study of optical properties of InGaN-based solar cell with blue emission wavelength

Jiangteng Wang, Wen Ding, Feng Yun, Qiang Li, Shuai Wang, Deyang Xia, Ye Zhang, Maofeng Guo, Shuo Liu, Xun Hou

Proceedings Volume 9449, The International Conference on Photonics and Optical Engineering (icPOE 2014); 94492M (2015) https://doi.org/10.1117/12.2083303
Event: The International Conference on Photonics and Optical Engineering and the Annual West China Photonics Conference (icPOE 2014), 2014, Xi'an, China

Abstract

The III-N material system (including alloys of InN, AlN, and GaN) has several characteristics which give it key advantages over the existing solar cell materials, for example, the high absorption coefficient and high carrier mobility, more important, the wide range of band gap energies which spans nearly the entire solar spectrum. In this paper, we fabricated a multiple quantum well (MQW) InGaN/GaN solar cell. The photovoltaic characteristics of the device was demonstrated that, the short circuit current density (J_SC) is about 0.43mA/cm² , the open circuit voltage is about 2.2 eV, and the fill factor is about 81%. But the peak external quantum efficiency (EQE) is not very high, only 30%. And the conversion efficiency is about 0.83%, so more work for device design should be done in the future.

Citation Download Citation

Jiangteng Wang, Wen Ding, Feng Yun, Qiang Li, Shuai Wang, Deyang Xia, Ye Zhang, Maofeng Guo, Shuo Liu, and Xun Hou "The study of optical properties of InGaN-based solar cell with blue emission wavelength", Proc. SPIE 9449, The International Conference on Photonics and Optical Engineering (icPOE 2014), 94492M (19 February 2015); https://doi.org/10.1117/12.2083303

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