MOCVD grown HgCdTe p+BnN+ barrier detector for MWIR HOT operation

M. Kopytko; A. Kębłowski; W. Gawron; P. Martyniuk; P. Madejczyk; K. Jóźwikowski; O. Markowska; A. Rogalski

doi:10.1117/12.2192152

4 June 2015 MOCVD grown HgCdTe p⁺BnN⁺ barrier detector for MWIR HOT operation

M. Kopytko, A. Kębłowski, W. Gawron, P. Martyniuk, P. Madejczyk, K. Jóźwikowski, O. Markowska, A. Rogalski

Proceedings Volume 9451, Infrared Technology and Applications XLI; 945117 (2015) https://doi.org/10.1117/12.2192152
Event: SPIE Defense + Security, 2015, Baltimore, MD, United States

Abstract

The work reports on mid-wavelength infrared HgCdTe barrier detectors with a zero valence band offset, grown by metal organic chemical vapour deposition on GaAs substrates. The experiments indicate the influence of the barrier on electrical and optical performances of the p⁺BnN⁺ device. The devices exhibit very low dark current densities in the range of (2÷3)×10^–3 A/cm² at 300 K and a high current responsivity of about 2A/W in the wide range of reverse bias voltage. The estimated thermal activation energy of about 0.33 eV is close to the full Hg_0.64Cd_0.36Te bandgap, what indicates diffusion limited dark currents.

Citation Download Citation

M. Kopytko, A. Kębłowski, W. Gawron, P. Martyniuk, P. Madejczyk, K. Jóźwikowski, O. Markowska, and A. Rogalski "MOCVD grown HgCdTe p⁺BnN⁺ barrier detector for MWIR HOT operation", Proc. SPIE 9451, Infrared Technology and Applications XLI, 945117 (4 June 2015); https://doi.org/10.1117/12.2192152

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