High Reliability Planar InGaAs/InP Photodiodes Made With High Yield by Atmospheric Pressure MOVPE

M. J. Robertson; C. P. Skrimshire; S. Ritchie; S. K. Sargood; A. W. Nelson; R. H. Walling; L. Davis; R. R. Sutherland

doi:10.1117/12.947520

21 September 1988 High Reliability Planar InGaAs/InP Photodiodes Made With High Yield by Atmospheric Pressure MOVPE

M. J. Robertson, C. P. Skrimshire, S. Ritchie, S. K. Sargood, A. W. Nelson, R. H. Walling, L. Davis, R. R. Sutherland

Proceedings Volume 0949, Fibre Optics '88; (1988) https://doi.org/10.1117/12.947520
Event: Sira/Fibre Optics '88, 1988, London, United Kingdom

Abstract

A high-yield process for making planar InGaAs/InP photodiodes based on metal-organic vapour phase epitaxy (MOVPE) growth at atmospheric pressure has been developed. The process results in very good uniformity and yield and gives high-performance devices of excellent reliability, with a random failure rate of less than 0.3 FITs at 20°C. This reliability performance is easily able to meet the stringent requirements for detectors in submarine systems.

Citation Download Citation

M. J. Robertson, C. P. Skrimshire, S. Ritchie, S. K. Sargood, A. W. Nelson, R. H. Walling, L. Davis, and R. R. Sutherland "High Reliability Planar InGaAs/InP Photodiodes Made With High Yield by Atmospheric Pressure MOVPE", Proc. SPIE 0949, Fibre Optics '88, (21 September 1988); https://doi.org/10.1117/12.947520

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