Metal silicide/Si thin-film Schottky-diode bolometers

Vladimir A. Yuryev; Kirill V. Chizh; Valery V. Chapnin; Victor P. Kalinushkin

doi:10.1117/12.2178487

1 June 2015 Metal silicide/Si thin-film Schottky-diode bolometers

Vladimir A. Yuryev, Kirill V. Chizh, Valery V. Chapnin, Victor P. Kalinushkin

Proceedings Volume 9519, Nanotechnology VII; 95190K (2015) https://doi.org/10.1117/12.2178487
Event: SPIE Microtechnologies, 2015, Barcelona, Spain

Abstract

Recently, we have demonstrated Ni silicide/poly-Si diodes as a budget alternative to SOI-diode temperature sensors in uncooled microbolometer FPAs. This paper introduces a solution still more suitable for industry: We have developed PtSi/poly-Si Schottky diodes for microbolometers. Ease of integration of the PtSi/poly-Si diode formation process into the CMOS technology, in analogy with the internal photoemission PtSi/Si IR FPAs, is the merit of the PtSi/poly-Si sensors. Now we demonstrate PtSi/poly-Si diode microbolometers and propose them as a promising solution for focal plane arrays.

Citation Download Citation

Vladimir A. Yuryev, Kirill V. Chizh, Valery V. Chapnin, and Victor P. Kalinushkin "Metal silicide/Si thin-film Schottky-diode bolometers", Proc. SPIE 9519, Nanotechnology VII, 95190K (1 June 2015); https://doi.org/10.1117/12.2178487

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