Paper
28 August 2015 Si based mid-infrared GeSn photo detectors and light emitters
Wei Du, Thach Pham, Joe Margetis, Huong Tran, Seyed A. Ghetmiri, Aboozar Mosleh, Greg Sun, Richard A. Soref, John Tolle, Hameed A. Naseem, Baohua Li, Shui-Qing Yu
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Abstract
In this work, high performance GeSn photoconductor and light emitting diodes (LED) have been demonstrated. For the photoconductor, the high responsivity was achieved due to high photoconductive gain, which is attributed to the novel optical and electrical design. The longwave cutoff at 2.4 μm was also observed at room temperature. For LED, temperature-dependent study was conducted. The electroluminescence (EL) spectra at different temperatures were obtained and EL peak shift was observed. Moreover, the emission power at different temperatures was measured. High power emission at 2.1 μm was achieved.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Du, Thach Pham, Joe Margetis, Huong Tran, Seyed A. Ghetmiri, Aboozar Mosleh, Greg Sun, Richard A. Soref, John Tolle, Hameed A. Naseem, Baohua Li, and Shui-Qing Yu "Si based mid-infrared GeSn photo detectors and light emitters", Proc. SPIE 9555, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications, 95550E (28 August 2015); https://doi.org/10.1117/12.2187540
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Cited by 2 scholarly publications.
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KEYWORDS
Photoresistors

Light emitting diodes

Tin

Electroluminescence

Germanium

Electrodes

Sensors

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