Charge trapping at the polymer-metal oxide interface as a first step in the electroforming of organic-inorganic memory diodes

Benjamin F. Bory; Paulo Rocha; Henrique L. Gomes; Dago M. de Leeuw; Stefan C. J. Meskers

doi:10.1117/12.2186577

17 September 2015 Charge trapping at the polymer-metal oxide interface as a first step in the electroforming of organic-inorganic memory diodes

Benjamin F. Bory, Paulo Rocha, Henrique L. Gomes, Dago M. de Leeuw, Stefan C. J. Meskers

Author Affiliations +

Proceedings Volume 9569, Printed Memory and Circuits; 956904 (2015) https://doi.org/10.1117/12.2186577
Event: SPIE Organic Photonics + Electronics, 2015, San Diego, California, United States

Abstract

Diodes containing a layer of aluminum oxide combined with a layer of π-conjugated polymer show nonvolatile memory effects after they have been electroformed. Electroforming is induced by application high bias voltage close to the limit for dielectric breakdown and can be performed reliably and with high yield on organic-inorganic hybrid diodes with controlled oxide thickness. Here we investigate the initial stage of the electroforming process and show through temperature dependent current-voltage characterization that electrons are trapped in deep traps at the interface between π-conjugated polyspirofluorene polymer and the aluminum oxide.

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Benjamin F. Bory, Paulo Rocha, Henrique L. Gomes, Dago M. de Leeuw, and Stefan C. J. Meskers "Charge trapping at the polymer-metal oxide interface as a first step in the electroforming of organic-inorganic memory diodes", Proc. SPIE 9569, Printed Memory and Circuits, 956904 (17 September 2015); https://doi.org/10.1117/12.2186577

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