Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes

M. Mandurrino; M. Goano; S. Dominici; M. Vallone; F. Bertazzi; G. Ghione; M. Bernabei; L. Rovati; G. Verzellesi; M. Meneghini; G. Meneghesso; E. Zanoni

doi:10.1117/12.2187443

8 September 2015 Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes

M. Mandurrino, M. Goano, S. Dominici, M. Vallone, F. Bertazzi, G. Ghione, M. Bernabei, L. Rovati, G. Verzellesi, M. Meneghini, G. Meneghesso, E. Zanoni

Author Affiliations +

Proceedings Volume 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems; 95710U (2015) https://doi.org/10.1117/12.2187443
Event: SPIE Optical Engineering + Applications, 2015, San Diego, California, United States

Abstract

We present results from a combined experimental and numerical investigation of trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes. We show that the excess forward leakage current in single-quantum-well InGaN/GaN light-emitting diodes can be explained by non-local tunneling-into-traps processes and subsequent non-radiative recombination with free carriers.

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M. Mandurrino, M. Goano, S. Dominici, M. Vallone, F. Bertazzi, G. Ghione, M. Bernabei, L. Rovati, G. Verzellesi, M. Meneghini, G. Meneghesso, and E. Zanoni "Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes", Proc. SPIE 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 95710U (8 September 2015); https://doi.org/10.1117/12.2187443

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