Design and development of wafer-level near-infrared micro-camera

John W. Zeller; Caitlin Rouse; Harry Efstathiadis; Pradeep Haldar; Nibir K. Dhar; Jay S. Lewis; Priyalal Wijewarnasuriya; Yash R. Puri; Ashok K. Sood

doi:10.1117/12.2193179

28 August 2015 Design and development of wafer-level near-infrared micro-camera

John W. Zeller, Caitlin Rouse, Harry Efstathiadis, Pradeep Haldar, Nibir K. Dhar, Jay S. Lewis, Priyalal Wijewarnasuriya, Yash R. Puri, Ashok K. Sood

Author Affiliations +

Proceedings Volume 9609, Infrared Sensors, Devices, and Applications V; 96090O (2015) https://doi.org/10.1117/12.2193179
Event: SPIE Optical Engineering + Applications, 2015, San Diego, California, United States

Abstract

SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can offer high bandwidths and responsivities. As a result of the significant difference in thermal expansion coefficients between germanium and silicon, tensile strain incorporated into Ge epitaxial layers deposited on Si utilizing specialized growth processes can extend the operational range of detection to 1600 nm and longer wavelengths. We have fabricated SiGe based PIN detector devices on 300 mm diameter Si wafers in order to take advantage of high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology. This device fabrication process involves low temperature epitaxial deposition of Ge to form a thin p⁺ seed/buffer layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. An n+-Ge layer formed by ion implantation of phosphorus, passivating oxide cap, and then top copper contacts complete the PIN photodetector design. Various techniques including transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) have been employed to characterize the material and structural properties of the epitaxial growth and fabricated detector devices. In addition, electrical characterization was performed to compare the I-V dark current vs. photocurrent response as well as the time and wavelength varying photoresponse properties of the fabricated devices, results of which are likewise presented.

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John W. Zeller, Caitlin Rouse, Harry Efstathiadis, Pradeep Haldar, Nibir K. Dhar, Jay S. Lewis, Priyalal Wijewarnasuriya, Yash R. Puri, and Ashok K. Sood "Design and development of wafer-level near-infrared micro-camera", Proc. SPIE 9609, Infrared Sensors, Devices, and Applications V, 96090O (28 August 2015); https://doi.org/10.1117/12.2193179

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KEYWORDS

Germanium

Sensors

Silicon

Photodetectors

Oxides

Near infrared

Transmission electron microscopy

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