The influence of thermal treatment on the passivation of SiNx film and the dark current of p-i-n InGaAs detector

Gaoqi Cao; Hengjing Tang; Xiumei Shao; Rui Wang; Qingfa Li; Jifeng Cheng; Tao Li; Xue Li; Haimei Gong

doi:10.1117/12.2199226

15 October 2015 The influence of thermal treatment on the passivation of SiN_x film and the dark current of p-i-n InGaAs detector

Gaoqi Cao, Hengjing Tang, Xiumei Shao, Rui Wang, Qingfa Li, Jifeng Cheng, Tao Li, Xue Li, Haimei Gong

Author Affiliations +

Proceedings Volume 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology; 967411 (2015) https://doi.org/10.1117/12.2199226
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China

Abstract

In this paper, we focus on the influence of thermal treatment on the passivation of silicon nitride (SiN_x) film of p-i-n InGaAs detector. In our experiment, the perimeter/area (P/A) test diodes are fabricated by using two different device processes, and the relationship between the dark current density and P/A is investigated. The results indicate that the thermal treatment in the vacuum can be able to improve the passivation SiN_x film effect and thus suppress the perimeterrelated current with the decrease of two orders of magnitude. Then the analysis of dark current source is carried out. The result shows that the sample with SiN_x film through thermal treatment is composed of diffusion current and ohmic current, on the contrary, the other mainly consists of surface leakage current and diffusion current. It is illustrated that the passivation effect of SiN_x was strengthened after thermal treatment and surface leakage current can be suppressed.

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Gaoqi Cao, Hengjing Tang, Xiumei Shao, Rui Wang, Qingfa Li, Jifeng Cheng, Tao Li, Xue Li, and Haimei Gong "The influence of thermal treatment on the passivation of SiN_x film and the dark current of p-i-n InGaAs detector", Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 967411 (15 October 2015); https://doi.org/10.1117/12.2199226

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