Design and implementation of a high-performance readout circuit  for uncooled infrared detector

Honghui Yuan; Shijun Chen; Houming Zhai; Yongping Chen

doi:10.1117/12.2199408

15 October 2015 Design and implementation of a high-performance readout circuit for uncooled infrared detector

Honghui Yuan, Shijun Chen, Houming Zhai, Yongping Chen

Proceedings Volume 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology; 96741E (2015) https://doi.org/10.1117/12.2199408
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China

Abstract

At present, most uncooled infrared detectors circuits consist of the corresponding blind pixel detector, which increases the complexity of uncooled infrared detector, and the performance of the readout circuits is not ideal in practical applications. In order to achieve high performance of the readout circuit for uncooled infrared detectors, a kind of readout circuit based on current mirror has been designed in this paper. The readout circuit is composed of current mirror input part, capacitor feedback transimpedance amplifier (CTIA) and correlated double sampling (CDS) output circuit. Transconductance amplifier CTIA with capacitance negative feedback is used in the circuit and it consists of three integral capacitors, thus the circuit can realize different magnifications. The CDS N SF (source follow) and P SF are adopted as the circuit’s output, the output swing can easily be greater than 2V. In average, the CDS N SF and P SF’s power consumption is very low. So the total power consumption of 160 line circuit is about 100 mW. The non-uniformity of circuit has been obviously improved by reasonable parameter settings. In the test, the non-uniformity of the readout circuit has reached 1%. The other test results of total power consumption and the output amplitude also agree with simulation results. When the readout circuit and uncooled infrared detector are connected, the infrared signal can be well read out. the device has good noise characteristics and the NETD(noise equivalent temperature difference) is near 80mK. When the integration time is 20μs, the whole device’s response is about 15mV/K.

Citation Download Citation

Honghui Yuan, Shijun Chen, Houming Zhai, and Yongping Chen "Design and implementation of a high-performance readout circuit for uncooled infrared detector", Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 96741E (15 October 2015); https://doi.org/10.1117/12.2199408

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KEYWORDS

Infrared detectors

Mirrors

Sensors

Resistance

Cadmium sulfide

Amplifiers

Infrared sensors

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