Simulation of semiconductor nanowire photodetectors with high photoconductive gain

Hanqing Cao; Jianjun Lai; Ji Zhu; Hongwei Li; Changhong Chen; Ying Huang

doi:10.1117/12.2202385

15 October 2015 Simulation of semiconductor nanowire photodetectors with high photoconductive gain

Hanqing Cao, Jianjun Lai, Ji Zhu, Hongwei Li, Changhong Chen, Ying Huang

Proceedings Volume 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology; 96742L (2015) https://doi.org/10.1117/12.2202385
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China

Abstract

In this paper, first we simulate the light absorption of individual cylindrical nanowire with the diameter ranging from 100 to 300 nm, it is found that the absorption peak has a red-shift along with the increased diameter. Then some numerical simulations have been done to elucidate the high gain mechanism and investigate the dependence of photoconductive gain on various parameters, such as doping, surface state density, and structure. The results show that optimizing these parameters appropriately can lead photoconductive gain up to 10⁶, and give a reliable guiding to the actual device design.

Citation Download Citation

Hanqing Cao, Jianjun Lai, Ji Zhu, Hongwei Li, Changhong Chen, and Ying Huang "Simulation of semiconductor nanowire photodetectors with high photoconductive gain", Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 96742L (15 October 2015); https://doi.org/10.1117/12.2202385

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KEYWORDS

Nanowires

Absorption

Doping

Silicon

Germanium

Photodetectors

Semiconductors

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