Broadly tunable DBR-free semiconductor disk laser

Zhou Yang; Alexander R. Albrecht; Jeffrey G. Cederberg; Shawn Hackett; Mansoor Sheik-Bahae

doi:10.1117/12.2213348

10 March 2016 Broadly tunable DBR-free semiconductor disk laser

Zhou Yang, Alexander R. Albrecht, Jeffrey G. Cederberg, Shawn Hackett, Mansoor Sheik-Bahae

Proceedings Volume 9734, Vertical External Cavity Surface Emitting Lasers (VECSELs) VI; 97340I (2016) https://doi.org/10.1117/12.2213348
Event: SPIE LASE, 2016, San Francisco, California, United States

Abstract

We report a DBR-free semiconductor disk lasers centered at 1160 nm with a tuning range of 78 nm, and ongoing effort on our DBR-free SDL centered at 1040 nm. Compared with conventional semiconductor disk lasers, DBR-free SDLs have a broader effective gain bandwidth. In CW operation, 2.5 W output power at 1160 nm and 6 W at 1055 nm were collected from the two lasers without thermal-rollover. Intracavity loss mitigation, currently underway, should improve power scaling and efficiency in these systems.

Citation Download Citation

Zhou Yang, Alexander R. Albrecht, Jeffrey G. Cederberg, Shawn Hackett, and Mansoor Sheik-Bahae "Broadly tunable DBR-free semiconductor disk laser", Proc. SPIE 9734, Vertical External Cavity Surface Emitting Lasers (VECSELs) VI, 97340I (10 March 2016); https://doi.org/10.1117/12.2213348

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