InAs-based type-II superlattice long wavelength photodetectors

Fangfang Wang; Jianxin Chen; Zhicheng Xu; Yi Zhou; Li He

doi:10.1117/12.2209424

13 February 2016 InAs-based type-II superlattice long wavelength photodetectors

Fangfang Wang, Jianxin Chen, Zhicheng Xu, Yi Zhou, Li He

Proceedings Volume 9755, Quantum Sensing and Nano Electronics and Photonics XIII; 975519 (2016) https://doi.org/10.1117/12.2209424
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

We report on the performance of long wavelength infrared type-II InAs-based InAs/GaAsSb superlattice photodiodes grown by molecular-beam epitaxy. The detectors had a 100% cutoff wavelength of ~ 9.7 μm and a peak current responsivity of 2.16 A/W at 80 K. The dark current density at -50 mV bias was 6.4×10^-4 A/cm² and the resistance-area product at zero bias (R0A) was 36.9 Ωcm². The black body detectivity and peak detectivity were 7.5×10¹⁰ cm Hz^1/2/W and 1.97×10¹¹ cm Hz^1/2/W, respectively. The quantum efficiency at 7.6 μm was measured to be ~34%. Good agreement was achieved between the measured I-V curves and the simulated ones, and between the experimental and theoretically predicted differential resistance values. At temperatures exceeding 75 K diffusion currents dominate the device performance. In the temperature range between 65 and 75 K, the performance of the InAs-based SL photodiodes is limited by GR processes. Trap-assisted tunneling current provides a significant contribution at temperatures below 65 K, while coherent tunneling currents are not of importance.

Citation Download Citation

Fangfang Wang, Jianxin Chen, Zhicheng Xu, Yi Zhou, and Li He "InAs-based type-II superlattice long wavelength photodetectors", Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII, 975519 (13 February 2016); https://doi.org/10.1117/12.2209424

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