Optimization of the epitaxial design of high current density resonant tunneling diodes for terahertz emitters

Razvan Baba; Benjamin J. Stevens; Toshikazu Mukai; Richard A. Hogg

doi:10.1117/12.2212346

13 February 2016 Optimization of the epitaxial design of high current density resonant tunneling diodes for terahertz emitters

Razvan Baba, Benjamin J. Stevens, Toshikazu Mukai, Richard A. Hogg

Author Affiliations +

Proceedings Volume 9755, Quantum Sensing and Nano Electronics and Photonics XIII; 97552W (2016) https://doi.org/10.1117/12.2212346
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

We discuss the numerical simulation of high current density InGaAs/AlAs/InP resonant tunneling diodes with a view to their optimization for application as THz emitters. We introduce a figure of merit based upon the ratio of maximum extractable THz power and the electrical power developed in the chip. The aim being to develop high efficiency emitters as output power is presently limited by catastrophic failure. A description of the interplay of key parameters follows, with constraints on strained layer epitaxy introduced. We propose an optimized structure utilizing thin barriers paired with a comparatively wide quantum well that satisfies strained layer epitaxy constraints.

Citation Download Citation

Razvan Baba, Benjamin J. Stevens, Toshikazu Mukai, and Richard A. Hogg "Optimization of the epitaxial design of high current density resonant tunneling diodes for terahertz emitters", Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII, 97552W (13 February 2016); https://doi.org/10.1117/12.2212346

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