Feasibility of a new absorber material for high NA extreme ultraviolet lithography

Ki-Ho Ko; Hye-Keun Oh

doi:10.1117/12.2219576

18 March 2016 Feasibility of a new absorber material for high NA extreme ultraviolet lithography

Ki-Ho Ko, Hye-Keun Oh

Proceedings Volume 9776, Extreme Ultraviolet (EUV) Lithography VII; 97762J (2016) https://doi.org/10.1117/12.2219576
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

The extreme-ultraviolet lithography (EUVL) has been regarded as the best candidate to achieve high resolution patterning below 1x nm node. From the Rayleigh criterion, a numerical aperture (NA) should be increased to make the high resolution pattern. A new absorber structure which has sufficient image contrast and small height is needed for realization of high NA optics. In this study, 28 nm-thick ruthenium oxide (RuO₂) is suggested for the absorber material. We could obtain higher image contrast and better H-V bias by using the RuO₂ absorber compared to the other materials such as TaN and TaBN.

Citation Download Citation

Ki-Ho Ko and Hye-Keun Oh "Feasibility of a new absorber material for high NA extreme ultraviolet lithography", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97762J (18 March 2016); https://doi.org/10.1117/12.2219576

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