Gallium nitride electro-acoustic devices and acoustic metamaterials

Mina Rais-Zadeh

doi:10.1117/12.2225332

17 May 2016 Gallium nitride electro-acoustic devices and acoustic metamaterials

Mina Rais-Zadeh

Proceedings Volume 9836, Micro- and Nanotechnology Sensors, Systems, and Applications VIII; 983608 (2016) https://doi.org/10.1117/12.2225332
Event: SPIE Defense + Security, 2016, Baltimore, MD, United States

Abstract

Gallium nitride (GaN) being one of a few piezoelectric semiconductors with low acoustic loss is a perfect material for electro-acoustic applications. Interactions of electrons and phonons are facilitated by the piezoelectric effect in addition to the deformation coupling in GaN, a property that can be used to implement a variety of very interesting devices and metamaterials, such as resonant transistors, acoustic amplifiers, circulators, and couplers. This talk covers theoretical basis of such devices and overviews recent advances in this technology.

Citation Download Citation

Mina Rais-Zadeh "Gallium nitride electro-acoustic devices and acoustic metamaterials", Proc. SPIE 9836, Micro- and Nanotechnology Sensors, Systems, and Applications VIII, 983608 (17 May 2016); https://doi.org/10.1117/12.2225332

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