Optimized Design Of Long-Wavelength Detectors For Integrated Photoreceivers

H. Schumacher; J. Soole; G. Moehrke; H. P. LeBlanc

doi:10.1117/12.959744

23 February 1989 Optimized Design Of Long-Wavelength Detectors For Integrated Photoreceivers

H. Schumacher, J. Soole, G. Moehrke, H. P. LeBlanc

Proceedings Volume 0988, Components for Fiber Optic Applications III and Coherent Lightwave Communications; (1989) https://doi.org/10.1117/12.959744
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

Metal-semiconductor-metal (MSM) and pin photodetectors have emerged over the past years as suitable options for large-bandwidth integrated receiver front-ends. In this paper we discuss the inherent bandwidth limitations set by practical constraints of size and quantum efficiency on InP/InGaAs based devices of both types under 1.3 and 1.55 pi m illumination. Large-bandwidth MSM detectors which use a strained GaAs layer between the InGaAs absorption layer and the Ti/Pt/Au contact fingers have been fabricated and tested. Their pulse response will be discussed in detail and compared with theoretical results.

Citation Download Citation

H. Schumacher, J. Soole, G. Moehrke, and H. P. LeBlanc "Optimized Design Of Long-Wavelength Detectors For Integrated Photoreceivers", Proc. SPIE 0988, Components for Fiber Optic Applications III and Coherent Lightwave Communications, (23 February 1989); https://doi.org/10.1117/12.959744

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