Excimer Laser Induced Chemical Etching Of Silicon With Halogen-Containing Gases

W. Sesselmann; F. Bachmann

doi:10.1117/12.960215

16 December 1988 Excimer Laser Induced Chemical Etching Of Silicon With Halogen-Containing Gases

W. Sesselmann, F. Bachmann

Proceedings Volume 0998, Excimer Beam Applications; (1988) https://doi.org/10.1117/12.960215
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

Excimer laser induced etching of silicon with chlorine exhibits distinct differences for 308 nm and 248 nm radiation. Photodissociation of chlorine occurs with high efficiency at 308 nm. The etch rates are strongly affected by chlorine gas pressure and gas flow. While at 248 nm these gas parameters are of minor importance, the photon energy suffices to directly break Si-Si and Si-Cl bonds of the solid surface. Higher etch rates are observed at 248 nm for a given laser fluence. Therefore, considering possible applications of excimer laser induced chemical etching of silicon 248 nm radiation appears to be more useful. An increase of the laser pulse repetition rate enhances the thermal contribution to the etch process which modifies the etch rate dependence on laser fluence. With xenondifluoride the spontaneous isotropic etch rate of silicon can be anisotropically enhanced by the laser radiation.

Citation Download Citation

W. Sesselmann and F. Bachmann "Excimer Laser Induced Chemical Etching Of Silicon With Halogen-Containing Gases", Proc. SPIE 0998, Excimer Beam Applications, (16 December 1988); https://doi.org/10.1117/12.960215

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