Timothy Gustafson,1 Kevin T. Zawilski,2 Peter G. Schunemann,2 Kent L. Averett,3 Nancy C. Giles,1 Larry E. Halliburton4
1Air Force Institute of Technology (United States) 2BAE Systems (United States) 3Air Force Research Lab. (United States) 4West Virginia Univ. (United States)
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CdSiP2 (CSP) is a non-linear optical material for mid-infrared optical parametric oscillators. Previous work showed that an intrinsic acceptor (Si vacancy) produced unwanted absorption in the near-IR. The VSi concentrations are much reduced in recent growths. Other compensating defects now play an important role: iron impurities, an intrinsic donor (Si-on-Cd antisite), and a second intrinsic acceptor (Cd vacancy). We present photoinduced electron paramagnetic resonance (EPR) spectra to identify these defects. Illumination using light sources (lasers, LEDs) in the 500nm to 1064nm range can “reveal” these defects by converting them to their paramagnetic charge states. We present the wavelength dependence and thermal stability of these defects. Thermal decay data allow us to determine activation energies for various defect charge state transitions which allows us to predict decay times at room temperature of defect charge states and related absorption bands that can impact laser devices.
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Timothy Gustafson, Kevin T. Zawilski, Peter G. Schunemann, Kent L. Averett, Nancy C. Giles, Larry E. Halliburton, "Intrinsic acceptors and donors in bulk CdSiP2 crystals," Proc. SPIE PC11985, Nonlinear Frequency Generation and Conversion: Materials and Devices XXI, PC119850A (1 April 2022); https://doi.org/10.1117/12.2610358