GaN laser diodes for quantum technologies

Piotr Perlin; Anna Kafar; Szymon Stanczyk; Dario Schiavon; Lucja Marona

doi:10.1117/12.2608751

5 March 2022 GaN laser diodes for quantum technologies

Piotr Perlin, Anna Kafar, Szymon Stanczyk, Dario Schiavon, Lucja Marona

Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120010N (2022) https://doi.org/10.1117/12.2608751
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

Recently emerged “quantum technologies” motivate researchers and engineers to develop a specific class of light sources. The expected devices should emit spectrally narrow and tunable light with excellent beam properties. Semiconductor laser diodes are the light source of choice for these applications. InGaN laser diodes, emitting in the visible part of the spectrum, should play very important role in these applications. Within this presentation we will describe InGaN external cavity laser diodes, semiconductor optical amplifiers and distributed feedback lasers. We will discuss the progress in development of these devices as well as main physical and technological challenges.

Conference Presentation

Citation Download Citation

Piotr Perlin, Anna Kafar, Szymon Stanczyk, Dario Schiavon, and Lucja Marona "GaN laser diodes for quantum technologies", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120010N (5 March 2022); https://doi.org/10.1117/12.2608751

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