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13 June 2022 Multi-purpose active probes in atomic resolution lithography, near field spectroscopy and field emission lithography
Tito L. Busani, Ivo W. Rangelow, Teodor Gotszalk, Mahmoud Behazirad
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Proceedings Volume PC12054, Novel Patterning Technologies 2022; PC120540Q (2022) https://doi.org/10.1117/12.2621979
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States
Abstract
We have investigated the potential of wide bandgap nitride tips, specifically GaN NWs as probes tips for AFM, FEL, STM. The use of GaN nanowires as probes creates the possibility of combining AFM and SPL tools, including STM, and NSOM, so that an ‘’universal multi-purpose probe’’ can be used for several lithography and microscopy techniques. We discuss how nanowires have been integrated with Si cantilevers to form the hybrid III-N and Si lithography probe. We have achieved 0.7 nm lithography features in STM mode, sub 7.5 nm lithography in FESPL mode, and optical waveguides into it to allow NSOM measurement and NSOM detection.
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Tito L. Busani, Ivo W. Rangelow, Teodor Gotszalk, and Mahmoud Behazirad "Multi-purpose active probes in atomic resolution lithography, near field spectroscopy and field emission lithography", Proc. SPIE PC12054, Novel Patterning Technologies 2022, PC120540Q (13 June 2022); https://doi.org/10.1117/12.2621979
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KEYWORDS
Lithography
Gallium nitride
Near field scanning optical microscopy
Field spectroscopy
Scanning tunneling microscopy
Atomic force microscopy
Emission spectroscopy
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