Presentation
13 June 2022 Adhesion and collapse of EUV photoresists and the role of underlayers
Author Affiliations +
Abstract
Pattern collapse and photoresist scumming reduce lithographic quality with detrimental consequence on the process window, etching and pattern transfer. As extreme ultraviolet (EUV) lithography patterning moves to smaller and smaller technology nodes, these phenomena become increasingly dominant. In this work, we propose a three-interface model that accounts for the collapse and wiggling during development (due to developer infiltration) and rinse and drying (due to capillary force). We introduce a metric W3 (dependant on photoresist thickness, pitch, CD, and linewidth roughness) and demonstrate experimentally that W3 of exposed materials predicts scumming while the W3 of unexposed materials predicts collapse and wiggling.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roberto Fallica, Steven Chen, Danilo De Simone, and Hyo Seon Suh "Adhesion and collapse of EUV photoresists and the role of underlayers", Proc. SPIE PC12055, Advances in Patterning Materials and Processes XXXIX, PC1205507 (13 June 2022); https://doi.org/10.1117/12.2609485
Advertisement
Advertisement
KEYWORDS
Photoresist materials

Extreme ultraviolet lithography

Capillaries

Critical dimension metrology

Photoresist developing

Interfaces

Line width roughness

Back to Top