CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume PC12421 > Article
Presentation
21 March 2023 Optimization of low resistivity Ti/Al/TiN/Au ohmic contacts to buffer-free AlGaN/GaN high electron mobility transistor structures
Maciej Kaminski, Oskar Sadowski, Andrzej Taube, Marek Ekielski, Jarosław Tarenko, Magdalena Zadura, Marek Wzorek, Anna Szerling
Author Affiliations +
Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2648930
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Recently much attention gained development of “buffer free” AlGaN/GaN HEMT structures with thin high quality AlN nucleation layer for better carrier confinement in the transistor channel mitigating short channel effects and with reduced thermal resistance. In this work results of development of low resistivity Ti/Al/TiN/Au ohmic contacts to such a structures will be presented . The impact of annealing temperature and different metal layer thickness on the ohmic contact formation, morphology and structural and electrical properties was studied. Low contact resistance of 0.28 Ωmm was obtained for metal stack with Ti/Al 20nm/80nm thickness after annealing at 750°C. Developed ohmic contacts were integrated in the AlGaN/GaN HEMT fabrication process. Good electrical characteristics were obtained showing high on-state current up to 0.95 A/mm. These prove applicability of developed process in technology of buffer-free AlGaN/GaN high electron mobility transistors.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Maciej Kaminski, Oskar Sadowski, Andrzej Taube, Marek Ekielski, Jarosław Tarenko, Magdalena Zadura, Marek Wzorek, and Anna Szerling "Optimization of low resistivity Ti/Al/TiN/Au ohmic contacts to buffer-free AlGaN/GaN high electron mobility transistor structures", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2648930
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Transistors
Annealing
Field effect transistors
Metals
Gallium nitride
Resistance
Microwave radiation
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top