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21 March 2023 Visible InGaN laser diodes with polarization-doped p-type layers
Piotr Perlin, Muhammed Aktas, Anna Kafar, Szymon Grzanka, Dario Schiavon
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2651985
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Although the polarization doping is a break-through technology for deep UV emitters, it is also very useful for enhancing p-type conductivity and lower the resistance in the classical InGaN laser diodes operating in the visible part of the spectrum. We were able, additionally, to show that these devices can operate in broader temperature range, especially at low (cryogenic) temperatures. We also show the drastic reduction in hydrogen content in top layers of the laser diodes, which may influence their reliability.
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Piotr Perlin, Muhammed Aktas, Anna Kafar, Szymon Grzanka, and Dario Schiavon "Visible InGaN laser diodes with polarization-doped p-type layers", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2651985
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KEYWORDS
Semiconductor lasers
Indium gallium nitride
Doping
Hydrogen
Polarization
P-type semiconductors
Resistance
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