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Erbium-doped fiber amplifiers have revolutionized long-haul optical communications and laser technology. Erbium ions could provide a basis for efficient optical amplification in photonic integrated circuits. We demonstrate a Si3N4 photonic integrated circuit–based erbium amplifier reaching > 100 mW output power and > 30 dB gain – comparable with commercial fiber amplifiers. Moreover, we will show that endowing Si3N4 photonic integrated circuits with Erbium-based optical gain opens the door to the miniaturization of high-performance fiber-based lasers on a chip.
Yang Liu,Zheru Qiu,Xinru Ji,Johann Riemensberger,Rui Ning Wang, andTobias J. Kippenberg
"Photonic integrated circuit-based Erbium-doped devices", Proc. SPIE PC12424, Integrated Optics: Devices, Materials, and Technologies XXVII, PC1242409 (17 March 2023); https://doi.org/10.1117/12.2661187
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Yang Liu, Zheru Qiu, Xinru Ji, Johann Riemensberger, Rui Ning Wang, Tobias J. Kippenberg, "Photonic integrated circuit-based Erbium-doped devices," Proc. SPIE PC12424, Integrated Optics: Devices, Materials, and Technologies XXVII, PC1242409 (17 March 2023); https://doi.org/10.1117/12.2661187