Low-noise single-photon avalanche diode array with extended NIR sensitivity

Cyril Saudan; Michel Antolovic; Harald Homulle; Augusto Carimatto; Stefanos Tsoukias

doi:10.1117/12.3010096

13 March 2024 Low-noise single-photon avalanche diode array with extended NIR sensitivity

Cyril Saudan, Michel Antolovic, Harald Homulle, Augusto Carimatto, Stefanos Tsoukias

Proceedings Volume PC12858, Nanoscale Imaging, Sensing, and Actuation for Biomedical Applications XXI; PC128580D (2024) https://doi.org/10.1117/12.3010096
Event: SPIE BiOS, 2024, San Francisco, California, United States

Conference Poster

Abstract

Single-photon avalanche diode (SPAD) arrays have surpassed other detector technologies ; photon-multiplying tubes (PMTs) in signal-noise ratio (SNR) and electron multiplied charge coupled devices (EMCCDs) in frame rate andphoton fidelity, and have proven beneficial for advanced microscopy applications. Resolution and SNR improvements have been demonstrated in image scanning microscopy (ISM) and quantum image scanning microscopy (qISM) . Despite SPAD arrays reaching near 100% fill factor thanks to optimized micro lense design and fabrication processes, the photon detection efficiency (PDE) remains limited in the red and near-IR wavelengths. In this work, we present a 23-channels SPAD array with low dark count rate (DCR), picosecond time tagging capabilities and improved sensitivity for wavelength from 600 to 1000 nm. The fabrication process is fully CMOS compatible and easily scalable to larger arrays. We show a PDE of 60% and 15% at 620 nm and 900 nm, respectively. Despite the increased spectral response, the SPAD array keeps a very low ambient temperature DCR of less than 100 counts per second.

Citation Download Citation

Cyril Saudan, Michel Antolovic, Harald Homulle, Augusto Carimatto, and Stefanos Tsoukias "Low-noise single-photon avalanche diode array with extended NIR sensitivity", Proc. SPIE PC12858, Nanoscale Imaging, Sensing, and Actuation for Biomedical Applications XXI, PC128580D (13 March 2024); https://doi.org/10.1117/12.3010096

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