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9 March 2024 Strain-compensated InGaN red LEDs grown by micro-flow-channel MOVPE
Kazuhiro Ohkawa, Martin Velazquez-Rizo, Mohammed Najmi, Daisuke Iida
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC1288614 (2024) https://doi.org/10.1117/12.3001451
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
For the development of efficient red LEDs with high-In-content InGaN quantum wells (QWs), we have developed the micro-flow-channel MOVPE method. This MOVPE can grow high-In-content InGaN at higher growth temperatures, resulting in higher quality. Also, we have introduced the strain compensation method at the QW region. Barrier layers consisting of Al(Ga)N could compensate for a compressive strain induced by InGaN. The strain compensation method has improved LED efficiency and elongated peak EL electroluminescence.
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Kazuhiro Ohkawa, Martin Velazquez-Rizo, Mohammed Najmi, and Daisuke Iida "Strain-compensated InGaN red LEDs grown by micro-flow-channel MOVPE", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC1288614 (9 March 2024); https://doi.org/10.1117/12.3001451
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KEYWORDS
Indium gallium nitride
Light emitting diodes
Aluminum gallium nitride
Barrier layers
Crystals
Luminescence
Quantum information
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