We present a GaSb based micro transfer printed (µTP) gain devices for integration with a 3 µm silicon-on-insulator platform and demonstrate integration to a reflective distributed Bragg reflector (DBR) forming a functional single frequency external cavity laser at 1960 nm. Previously used on InP and GaAs, we transferred the technique on GaSb, that allows the expansion of applications from telecommunication to sensing, such as environmental gas detection. In addition, we introduce a test device series and a methodology to measure and analyze the effects µTP design specific features, such as etched facets, to assess the transfer print process quality.
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