Low-voltage high-speed silicon MOSCAP microring modulator

Alan X. Wang

doi:10.1117/12.3008181

13 March 2024 Low-voltage high-speed silicon MOSCAP microring modulator

Alan X. Wang

Author Affiliations +

Proceedings Volume PC12891, Silicon Photonics XIX; PC128910F (2024) https://doi.org/10.1117/12.3008181
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Silicon microring modulator (Si-MRM) plays an essential role in optical communication and optical computation. Typically, the Si-MRM is modulated by a reversed PN junction that controls the depletion zone width to achieve high-speed operation. A different approach is to drive the Si-MRM with a metal-oxide-semiconductor capacitor (MOSCAP) and utilize accumulated charges to modulate the refractive index. In this work, we demonstrate a Si-MRM with MOSCAP consisting of high mobility transparent conducting oxide (HMTCO)/hafnium oxide insulator/p-type Si, which achieved sub-volt driving voltage and 25Gb/s modulation.

Conference Presentation

Citation Download Citation

Alan X. Wang "Low-voltage high-speed silicon MOSCAP microring modulator", Proc. SPIE PC12891, Silicon Photonics XIX, PC128910F (13 March 2024); https://doi.org/10.1117/12.3008181

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