Characterization of MOVPE grown InGaAs/GaAs semiconductor quantum dots as gain medium in edge emitting lasers

Philipp Noack; Nathalie Benzler; Sergej Vollmer; Michael Jetter; Peter Michler

doi:10.1117/12.3001593

13 March 2024 Characterization of MOVPE grown InGaAs/GaAs semiconductor quantum dots as gain medium in edge emitting lasers

Philipp Noack, Nathalie Benzler, Sergej Vollmer, Michael Jetter, Peter Michler

Author Affiliations +

Proceedings Volume PC12905, Novel In-Plane Semiconductor Lasers XXIII; PC129050F (2024) https://doi.org/10.1117/12.3001593
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Semiconductor quantum dots (QDs) offer various unique properties that make them interesting candidates for the use as gain media in semiconductor laser diodes. MOVPE is used as the method of growth for the QD structures with high area density and vertically stacked QD layers. This leads to a broad gain spectrum, which enables laser devices with wide tuning ranges around 1300nm. We incorporate this active region into edge-emitting laser structures, for the characterization of optical gain and absorption properties, as well as the inner losses.

Conference Presentation

Citation Download Citation

Philipp Noack, Nathalie Benzler, Sergej Vollmer, Michael Jetter, and Peter Michler "Characterization of MOVPE grown InGaAs/GaAs semiconductor quantum dots as gain medium in edge emitting lasers", Proc. SPIE PC12905, Novel In-Plane Semiconductor Lasers XXIII, PC129050F (13 March 2024); https://doi.org/10.1117/12.3001593

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