quantum dot based III-N LED on 200mm Si(100) for display applications

Andrew Clark; Rytis Dargis; Mark Furlong; Rodney Pelzel

doi:10.1117/12.3012678

13 March 2024 quantum dot based III-N LED on 200mm Si(100) for display applications

Andrew Clark, Rytis Dargis, Mark Furlong, Rodney Pelzel

Proceedings Volume PC12906, Light-Emitting Devices, Materials, and Applications XXVIII; PC129060T (2024) https://doi.org/10.1117/12.3012678
Event: SPIE OPTO, 2024, San Francisco, California, United States

Conference Poster

Abstract

Growth of IIIN microLEDS on Si(100) substrates would enable direct integration with Si based CMOS. An oxide buffer is used to translate the crystal symmetry so that GaN(0001) can be grown on Si(100) in a wurtzite form. InGaN quantum dots (QDs) are presented as a novel solution to obtaining a red LED from the III-N material system. An engineered bottom contact is demonstrated by the addition of an epitaxial metal layer below the QDs.

Citation Download Citation

Andrew Clark, Rytis Dargis, Mark Furlong, and Rodney Pelzel "quantum dot based III-N LED on 200mm Si(100) for display applications", Proc. SPIE PC12906, Light-Emitting Devices, Materials, and Applications XXVIII, PC129060T (13 March 2024); https://doi.org/10.1117/12.3012678

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