Process Control for EUV Lithography
Abstract
There are several sources of process variation that are unique to EUV lithography or of significantly greater significance than in optical lithography. The issues for overlay, linewidth control, and defects relevant to EUV lithography are discussed in this chapter. Recently, attention has been given to the subject of edge placement errors, which result from a combination of critical dimension and overlay errors. Although edge placement is the fundamental quantity of interest, overlay and critical dimension control will be considered separately in this chapter so that the causes of process variations can be understood more clearly. Metrology is an important consideration for process control and is the topic of the next chapter.
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KEYWORDS
Extreme ultraviolet lithography

Photomasks

Semiconducting wafers

Optical lithography

Extreme ultraviolet

Stochastic processes

Overlay metrology

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