We have developed multi-field imprint (MFI) technology to improve the productivity of for nano-imprint lithography (NIL). Using a template having an imprinting size of 46 mm × 28 mm for MFI and the latest NIL system NZ2C (Canon Corp.), we successfully achieved MFI on a 300-mm wafer. The throughput being equivalent to 160 wafers per hour was demonstrated using throughput enhancement solutions, such as gas permeable spin-on-carbon and multi field dispense. The overlay accuracy around 7 nm was also obtained. In this report, we’ll report about the performance of MFI technology: patterning ability, throughput, and overlay accuracy, and discuss the future outlook. |
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Semiconducting wafers
Nanoimprint lithography
Optical alignment
Distortion
Lithography
Optical lithography
Head