16 December 2021 Multi-field imprint technology: enabling the productivity enhancement of nano-imprint lithography
Tetsuro Nakasugi, Kazuya Fukuhara, Motofumi Komori, Soichi Inoue, Koji Hashimoto, Ryoichi Inanami
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Abstract

We have developed multi-field imprint (MFI) technology to improve the productivity of for nano-imprint lithography (NIL). Using a template having an imprinting size of 46  mm  ×  28  mm for MFI and the latest NIL system NZ2C (Canon Corp.), we successfully achieved MFI on a 300-mm wafer. The throughput being equivalent to 160 wafers per hour was demonstrated using throughput enhancement solutions, such as gas permeable spin-on-carbon and multi field dispense. The overlay accuracy around 7 nm was also obtained. In this report, we’ll report about the performance of MFI technology: patterning ability, throughput, and overlay accuracy, and discuss the future outlook.

© 2021 Society of Photo-Optical Instrumentation Engineers (SPIE) 1932-5150/2021/$28.00 © 2021 SPIE
Tetsuro Nakasugi, Kazuya Fukuhara, Motofumi Komori, Soichi Inoue, Koji Hashimoto, and Ryoichi Inanami "Multi-field imprint technology: enabling the productivity enhancement of nano-imprint lithography," Journal of Micro/Nanopatterning, Materials, and Metrology 21(1), 011002 (16 December 2021). https://doi.org/10.1117/1.JMM.21.1.011002
Received: 21 June 2021; Accepted: 6 August 2021; Published: 16 December 2021
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KEYWORDS
Semiconducting wafers

Nanoimprint lithography

Optical alignment

Distortion

Lithography

Optical lithography

Head

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