31 January 2023 Probabilistic process window: a new approach to focus-exposure analysis
Author Affiliations +
Abstract

Background

Focus-exposure process window measurement and analysis is an essential function in lithography, but the current geometric approach suffers from several significant deficiencies.

Aim

By clearly identifying the problems with the geometric process window approach, a process window measurement and analysis method will be proposed to address these problems.

Approach

The probabilistic process window (PPW) proposed here takes metrology uncertainty into account and rigorously calculates the expected fraction of in-spec features based on settings for the best dose/focus and presumed random errors in dose and focus. Using the fraction of in-spec features thus calculated, a much more rigorous determination of the trade-off between exposure latitude and depth of focus (DOF) can be performed.

Results

The PPW approach is demonstrated on focus-exposure data generated from a standard extreme ultraviolet lithography process at three different pitches, showing the value of this method.

Conclusions

The PPW approach offers clear advantages in accuracy for both DOF determination and the best dose/focus determination. Consequently, its use is preferred both for process development applications and high-volume manufacturing.

© 2023 Society of Photo-Optical Instrumentation Engineers (SPIE)
Chris A. Mack, Jonathan Yannuzzi, Gian F. Lorusso, Mohamed Zidan, Danilo De Simone, Ataklti Weldeslassie, Nadia Vandenbroeck, Philippe Foubert, Christophe Beral, and Anne-Laure Charley "Probabilistic process window: a new approach to focus-exposure analysis," Journal of Micro/Nanopatterning, Materials, and Metrology 22(2), 021007 (31 January 2023). https://doi.org/10.1117/1.JMM.22.2.021007
Received: 19 September 2022; Accepted: 30 December 2022; Published: 31 January 2023
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Metrology

Error analysis

Measurement uncertainty

Line width roughness

Electroluminescence

Semiconducting wafers

Lithography

Back to Top