Improved four-mirror optical system for deep-ultraviolet submicrometer lithography

Jong-Tae Kim; Hong-Jin Kong; Sang-Soo Lee

doi:10.1117/12.61056

1 March 1993 Improved four-mirror optical system for deep-ultraviolet submicrometer lithography

Jong-Tae Kim, Hong-Jin Kong, Sang-Soo Lee

Author Affiliations +

Optical Engineering, Vol. 32, Issue 3, (March 1993). https://doi.org/10.1117/12.61056

Abstract

The design for a rotationally symmetric four-mirror optical system with reduction magnification 5 x for deep UV (λ = 248 nm of a KrF excimer laser) submicrometer lithography is developed. Initially by using the paraxial quantities, numerical solutions are found for the system, which is free from the four off-axial third-order aberrations-coma, astigmatism, field curvature, and distortion. Aspherization is carried out to the spherical mirror surfaces to reduce the axial and residual off-axial higher order aberrations. The numerical aperture of the final system is as large as 0.38, which gives a Rayleigh resolution of 0.4 μm and hence is useful in submicrometer lithographic applications.

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Jong-Tae Kim, Hong-Jin Kong, and Sang-Soo Lee "Improved four-mirror optical system for deep-ultraviolet submicrometer lithography," Optical Engineering 32(3), (1 March 1993). https://doi.org/10.1117/12.61056

Published: 1 March 1993

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